Sb掺杂Sn2S3薄膜的表征及电学特性.pdfVIP

真空科学与技术学报 第 31 卷第1 期 CHINESE JOURNAL OF VACUUM SCIENCE AND TECHNOLOGY 却11 年 1 ，2 月 89 Sb 掺杂 Sn2乌薄膜的表征及电学特性 柴燕华学健铸卢建丽 (1.内蒙古大学物理科学与技术学院 呼和浩特 010021 ; 2. 内蒙古高等学校半导体光伏技术熏点实验室 呼和精特 01α)21) Growth and Electrical Properties of 侃.Doped S02S3 Films Chai Yanhua , Li Jian 铃，l.u Jianli (1. School of Physical 灿附and TecluwÚJgy , lnner Mongol Univer咐， Ho胁。t 010021 ， 刷刷 2. Key Lahor幽， ry of semico础刷r A灿阳胁T础noÚJgyfor CoUegω oflnner Mor够。，lÚl Au印刷ωω Re.伊n ， Hohhot 010021 , G灿ω) Abstract The Sb-do伊d Sn2~与日lms were grown by vacuum va阴r de阳ition on 阱ss s巾strau珉The influence of deposition conditions. such as the Sb do锦ge ， annealing tempemture and de阴阳tion rates ,on film 伊Owth was experimental- ly s阳died. 啊le micro自tructures and electrical properties of the Sb-doped Sn2S宫 filn赐 were characteri优d with X-ray diffrac- tion ,X -ray photoelectron s阴沟too悦。py and scanning electoon micoo悦。py .The results show that the sb doping and 创meal­ i吨 si伊ific棚tly impoove theφlality of the films. For instance ,annealed at 380 t for 30 min ,the polycrystalline 5n2乌 film do伊d with 5% ( at. ) . Sb shows an orthogonal crystalline structure; and its resistivity decreω叫 by 3 orders of m咱让tude ， from 79 灿cm of 出e control SaD1ple down to 23. 70 n. cm .Possible mechanisms were also tentatively discus时. Keywords Vacuum va阳r deposition ,Heat treatment ,5nzs:3 thin films ,Sb-do酬，Electricalωnductivity 摘要 真空蒸发制备 sb 掺杂h乌多晶薄腰。研究不同比例 sb 掺杂对h乌薄膜的电学、结构、表面形貌、化学细分的影 响，实验给出掺阳%薄膜经刷℃热处理3Omi.n可我得结构良好正变品系的Snz5.J:他多晶薄膜，薄膜的电阻率从未掺杂时的 79 k.fh:m 降到 23.7 n.恻，下降了Z个数最级。 问马薄腆表面为颗校状，体内化学计最比 Sn/S 为 1: 1. 49，与标准计赞比非常接近; 掺Sb(5% )后为 1 :0.543 ，Sn过囊。 sn