SiC衬底上外延石墨烯的氢插入及表征.pdfVIP

人工晶体学报 第44 卷第 12 期 Vol. 44 No.12 2015 年 12 月 JOURNAL OF SYNTHETIC CRYSTALS December ,2015 SiC 衬底上外延石墨烯的氢插入及表征 郁万成，陈秀芳，孙丽，胡小波，徐现刚，赵显 (山东大学晶体材料国家重点实验室，济南 2501∞) 摘要:使用热解法在4H-SiC 硅面制备出单层石墨烯，而后将石墨烯置于氢气气氛下退火，使氢插入到缓冲层与 SiC 衬底之间。利用X 射线光电子能谱对氢插入后的化学键变化进行了表征。样品的碳 Is 能谱中碳元素由 SiC 衬底、 石墨烯及缓冲层共同构成。对不同氢气退火温度下各组分的强度进行采集与分析，并分别与相应的拉曼光谱数据 进行对比。结果表明，低于8∞℃退火温度会造成氢插入的不完全，但当退火温度超过 12∞℃后，插入的氢将被 释放。为在得较优的氢插入效果，需要选择 1000 c左右的氢气退火温度。 关键词:石墨烯;碳化硅;热解法 中固分类号:078 文献标识码:A 文章编号:1(削-985X (2015) 12-3384-05 Hydrogen Intercalation and Characterization of Epitaxial Graphene Grown on SiC Substrates YU W;αn-cheng ， CHEN Xiuja晤， SUN Li , HU Xi aJJ -bo , XU Xian-gα呵， ZHAO Xian (State Key Laboratory of Crystal Materials , Shandong University , Jinan 2501∞， China) ( Received 23 luly 2015 , accepted 7 Sep甜mber2015) Abstract: Monolayer graphene was prepared by thermal decomposition of 4 H-SiC substrates on the Si- terminated face , subsequent hydrogen intercalation between buffer layer and substrate was achieved by annealing graphene in molecular hydrogen atmosphere. X-ray photoelectron spectroscopy was used to analyze the chemical bonding states of graphene after hydrogen intercalation. The C Is core-level was resolved into carbon from bulk SiC , carhon from graphene and carbon from buffer layer. The intensity of each component under different hydrogen intercalation temperture was recorded and analyzed. Compared with Raman spectroscopy , the results show that hydrogen intercalation was incomplete belo