电子科学与技术专业英语2.1.4 Parasitic Internal Currents.pptVIP

Specialized English School of Physics Optoelectronic Engineering W. Zhang The remaining two currents are parasitic in the sense that they vanish in the ideal BJT，and nearly vanish in the silicon BJT．First, a small current is shown in Figure 2一4 as splitting from IB to a recombination gap within the base region．A small but finite portion of the flood of electrons diffusing from emitter to collector fails to reach the collector，recombining in transit，and it is this occurrence that the second gap symbolizes． In the early BJTs，most of the base current was consumed by this mechanism because the base thickness XB amounted to tens of micrometers and base-region lifetime values τB were sometimes low．As a result, the crucial electron profile in the base region departed significantly from the modern-device linear profile shown in Figure 2一3（d) ． The base-transport efficiency γβ took on considerable importance in those days．（Today it is so close to unity that it is rarely mentioned．）The factor γβ can be defined as the ratio of electron current departing from the active base region at its right-hand surface to the electron current entering the active base region at its left-hand surface． Returning now to the modern transistor，we stress that IB is very nearly equal to the current of holes being injected into the emitter．This brings us to a second efficiency factor，γE，one that is of great importance in the modern BJT．It can be define as where InE and IpE are，respectively，the electron current being injected into the base region by the emitter junction and the hole current being injected into the emitter region by the same junction .The total emitter-junction current is inevitably equal to the emitter-terminal current IE． In a “perfect emitter，all of the emitter current would consist of electrons injected into the base region. From this point of view IpE（the current of holes injected into the emitter region) is a defect current，a description sometime