基于2μm GaAs HBT 工艺的分布式放大器设计 - 高技术通讯.PDF

基于 2μm GaAs HBT 工艺的分布式放大器设计* 1)2) 1) 1) 张瑛 王志功 徐建 (1.东南大学 射频与光电集成电路研究所, 南京 210046) (2.南京邮电大学 电子科学与工程学院, 南京 210046) 摘 要: 无线通信技术的迅猛发展对放大器的带宽性能提出了更高要求，而分布式放大器是提高带宽的有效途径。本 文给出了一种基于2μm GaAs HBT工艺的分布式放大器。设计采用输入电容耦合技术和L型传输线结构，有效提升了放 大器的频率性能。测试结果显示该放大器的3dB带宽达到14GHz，在1.2～10.5GHz频率范围内增益为6.6dB，带内增益 平坦度为±0.5dB ，输入回波损耗小于-14dB，输出回波损耗小于-8.8dB，表现出了高增益和大带宽的特性。 关键词：分布式放大器；人工传输线；异质结晶体管；超宽带 中图分类号：TN47 文献标识码: A 文章编号: Design of a distributed amplifier based on 2-μm GaAs HBT 1)2) 1) 1) Zhang Ying Wang Zhigong Xu Jian (1.Institute of RF- OE-ICs, Southeast University, 210096 Nanjing, China) (2. College of Electronics ScienceEngineering, Nanjing University of PostsTelecommunications, 210046 Nanjing, China) Abstract：The rapid development of wireless communication technology gives the requirements for higher bandwidth of amplifiers. Distributed amplifiers (DAs ） provide an effective way to improve the bandwidth performance. This article presents a DA based on 2-μm GaAs HBT process. An input capacitance coupling technology and an L type transmission line structure are adopted to increase the frequency performance. The measurement results show that the DA provides a 3-dB bandwidth as high as 14 GHz. The amplifier gives a 6.6-dB gain from 1.2 GHz to 10.5GHz with an excellent gain flatness of ±0.5dB 。The input return loss is lower than -14 dB while the output return loss is lower than -8.8 dB. The design exhibits desired gain-bandwidth characteristics.