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AO8804
Common-Drain Dual N-Channel Enhancement Mode Field
Effect Transistor
General Description Features
The AO8804 uses advanced trench technology to VDS (V) = 20V
provide excellent RDS(ON), low gate charge and I = 8A
D
operation with gate voltages as low as 1.8V while RDS(ON) 13mΩ (VGS = 10V)
retaining a 12V VGS(MAX) rating. It is ESD protected. RDS(ON) 14mΩ (VGS = 4.5V)
This device is suitable for use as a uni-directional or
RDS(ON) 19mΩ (VGS = 2.5V)
bi-directional load switch, facilitated by its common-
RDS(ON) 27mΩ (VGS = 1.8V)
drain configuration.
ESD Rating: 2000V HBM
TSSOP-8
D1 D2
Top View
D1/D2 1 8 D1/D2
S1 2 7 S2
S1 3 6 S2 G1 G2
G1 4 5 G2
S1 S2
Absolute Maximum Ratings T =25°C unless otherwise noted
A
Parameter Symbol Maximum Units
Drain-Source Voltage VDS 20 V
Gate-Source Voltage VGS ±12 V
Continuous Drain TA=25°C 8
A
Current T =70°C
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