IGBT 概论.PDFVIP

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  • 约3.51千字
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  • 2017-06-19 发布于天津
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IGBT 概论

IGBT IGBT(Insulated Gate Bipolar Transistor)BJT( ) MOS(), MOSFET GTR GTR ;MOSFET IGBT 600V 1 N N+ N+ P P+ P Subchannel region P+ Drain injector IGBT PNP IGBT PNP IGBT IGBT IGBT MOSFET N MOSFET MOSFET P+ N N N IGBT [] IGBT IGBT Ugs Ugs Ugs Id GTR 1 2 3 IGBT J2 J1 N+ N+ IGBT IGBT Id Ugs MOSFET Ugs(th) IGBT IGBT Id Ugs 15V IGBT IGBT PNP B MOSFET IGBT Uds(on) Uds(on) Uj1 Udr IdRoh Uj1 —— JI 0.7 1V Udr —— Rdr Roh —— Ids Ids=(1+Bpnp)Imos Imos —— MOSFET N+ IGBT 1000V IGBT 2 3V IGBT IGBT MOSFET Uds PNP td(on) tri ton td (on) tri tfe1 tfe2 IGBT IGBT - MOSFET IGBT MOSFET IGBT MOSFET IGBT MOSFET PNP td(off) trv Uds(f)Tf t(f1) t(f2) t(off)=td(off)+trv t(f) td(off)trv IGBT MOSFETGTR IGBT IGBT 34V MOSFET IGBT MOSFET GTR IGBT 10KV IGBT ABB 8KV IGBT EUPEC 65

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