电子模拟技术(国外英文资料).docVIP

电子模拟技术(国外英文资料) Chapter 1 test (100 points, 120 minutes) One, fill-in-the-blanks: (0.5 points, 25 points) The n-type semiconductor is made up of a very small amount of five valence elements in the semiconductor. The majority of the carriers in this semiconductor are free electrons, a few of which are holes, and impurities that cannot be moved are positively charged. The p-type semiconductor is composed of extremely small trivalent elements in the semiconductor. The majority of the inside of the semiconductor are empty holes, and a few are free electrons, which cannot be moved by a negative charge. The internal structure of the triode is composed of the launch area, the base area, the collecting area and the launch junction and the collector junction. The electrode of the triode is the transmission pole, base and collector electrode respectively. When the PN junction is biased, the direction of the external field is opposite to the direction of the internal electric field, which is beneficial to most carriers The movement of diffusion is not conducive to the drift of minority carriers; P-n junction reverse biased, the direction of the electric field and electric field in the same direction, in help Jane drift motion and not conducive to the spread of the children, the current in this case, is called reverse saturation current. 4, p-n junction in the process of formation, most of p-type semiconductor carrier diffusion from P to N area, the majority carrier by N to P in n-type semiconductor area to spread. The result of the diffusion is to establish a space charge area on the boundary of the area, which is directed by the N region to the p-block. The establishment of the space charge region, to weaken the effect to the majority carrier diffusion, drift enhanced role of Jane, when these two kinds of sports to achieve dynamic balance, the PN junction formation. 5, detecting diode polarity, need a multimeter ohm block R x 1 k rank, whose hands deflection is larger when the