2CMOS工艺.ppt

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2017-06-24 发布于河南
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2CMOS工艺.ppt

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2CMOS工艺

* * * * * * * * * 几种常用的电阻1 * 几种常用的电阻2 * 几种常用的电阻3 * 实例1（高压MOS晶体管）西安电子科技大学 * 实例2（CMOS逻辑电路）西安电子科技大学 * Thanks！西安电子科技大学 Wafer Fabrication Process Technology CMOS CSMC * Content 0.5um CMOS (LDD) process flow cross section LDD=lightly doping drain CMOS Starting with a silicon wafer Cross Section of the Silicon Wafer Magnifying the Cross Section CMOS n/p-well Formation Grow Thin Oxide Deposit Nitride Deposit Resist silicon substrate UV Exposure Develop Resist Etch Nitride n-well Implant Remove Resist CMOS n/p-well Formation silicon substrate Grow Oxide (n-well) Remove Nitride p-well Implant Remove Oxide Twin-well Drive-in p-well n-well Remove Drive-In Oxide silicon substrate p-well n-well CMOS LOCOS Isolation Grow Thin Oxide Deposit Nitride Deposit Resist UV Exposure Develop Resist Etch Nitride Remove Resist CMOS LOCOS Isolation silicon substrate p-well n-well Deposit Resist UV Exposure Develop Resist Field Implant B Remove Resist Grow Field Oxide Fox Remove Nitride Remove Oxide silicon substrate p-well n-well Grow Screen Oxide CMOS Transistor Fabrication Vt Implant Deposit Resist UV Exposure Develop Resist Punchthrough Implant Remove Resist Remove Oxide Fox silicon substrate p-well n-well Grow Gate Oxide CMOS Transistor Fabrication Deposit PolySi PolySi Implant polySi polySi Deposit Resist UV Exposure Develop Resist Etch PolySi Remove Resist Fox silicon substrate p-well n-well CMOS Transistor Fabrication Deposit Thin Oxide Deposit Resist UV Exposure Develop Resist n-LDD Implant Remove Resist Fox polySi polySi silicon substrate p-well n-well CMOS Transistor Fabrication Deposit Resist UV Exposure Develop Resist p-LDD Implant Remove Resist Deposit Spacer Oxide Etch Spacer Oxide Fox polySi polySi silicon substrate p-well n-well CMOS Transistor Fabrication Deposit Resist UV Exposure Develop Resist n+ S/D Implant n+ n+ Remove Resist Fox polySi polySi silicon substrate p-well n-well CMOS Transistor Fabrication Deposit Resist UV Exposure Develop Resist p+ S/D Implant p+ p+ R