MT29F8G08AAAWPA TR;MT29F8G08AAAWP-ETA TR;MT29F16G08DAAWP-ETA TR;中文规格书,Datasheet资料.pdfVIP

4Gb, 8Gb, and 16Gb x8 NAND Flash Memory Features NAND Flash Memory MT29F4G08AAA, MT29F8G08BAA, MT29F8G08DAA, MT29F16G08FAA Features Figure 1: 48-Pin TSOP Type 1 • Single-level cell (SLC) technology • Organization – Page size x8: 2,112 bytes (2,048 + 64 bytes) – Block size: 64 pages (128K + 4K bytes) – Plane size: 2,048 blocks – Device size: 4Gb: 4,096 blocks; 8Gb: 8,192 blocks; 16Gb: 16,384 blocks • READ performance – Random READ: 25µs (MAX) – Sequential READ: 25ns (MIN) • WRITE performance – PROGRAM PAGE: 220µs (TYP) – BLOCK ERASE: 1.5ms (TYP) • Data retention: 10 years • Endurance: 100,000 PROGRAM/ERASE cycles Options • First block (block address 00h) guaranteed to be 2 1 • Density valid up to 1,000 PROGRAM/ERASE cycles – 4Gb (single die) • Industry-standard basic NAND Flash command set – 8Gb (dual-die stack 1 CE#) • Advanced command set: – 8Gb (dual-die stack 2 CE#) – PROGRAM PAGE CACHE MODE – 16Gb (quad-die stack) – PAGE READ CACHE MODE • Device width: x8 – One-time programmable (OTP) commands • Configuration – Two-plane commands