电子信息技术（国外英文资料）.docVIP

电子信息技术 Semiconductor diode parameter symbols and their significance CT--- barrier capacitance Cj--- junction (interelectrode) capacitance means the total capacitance of the germanium detector diode at the specified bias voltage at both ends of the diode Cjv--- bias junction capacitor Co--- zero bias capacitor Cjo--- zero bias junction capacitance Cjo/Cjn--- junction capacitance change Cs--- shell capacitor or package capacitor Ct--- total capacitance CTV--- voltage temperature coefficient. At test current, the ratio of the relative change of the steady voltage to the absolute change of the ambient temperature Temperature coefficient of CTC--- capacitor Cvn--- nominal capacitance IF--- forward direct current (forward test current). Germanium detector diode in the forward voltage under the VF regulations, through the current between the electrodes; silicon rectifiers, silicon stack in the use of the prescribed conditions, the maximum current through the half wave sine allows continuous in (average), silicon switching diode allows the positive DC current through the current under rated power; given the measurement of electrical parameters when the positive voltage regulator diode IF (AV) - forward average current IFM (IM) - forward peak current (forward maximum current). At rated power, the maximum forward pulse current is allowed to pass through the diode. LED current limit. IH--- constant current and sustaining current. Ii--- led glow current IFRM--- peak repetitive peak current IFSM--- forward non repetitive peak current (surge current) Io--- rectifier current. The operating current passed under specified frequency and specified voltage in a given circuit IF (OV) - forward overload current IL--- photocurrent or current limiting diode current limit ID--- dark current Base modulation current in a IB2--- single junction transistor IEM--- peak emitter current The reverse current between the emitter and the first base in IEB10--- double pole single crystal tube Emission