光刻工艺中的焦距异常发生原因分析及解决办法.pdfVIP

目 录 摘 要····························································l Abstract·················································-··········3 第一章半导体光刻技术···············································5 第一节光刻工艺技术发展及展望····································5 第二节光刻基本原理及成像条件································““6 第三节光阻化学性质与作用····································“”6 第四节光刻工艺流程介绍··········································8 1．4．1去水烘烤／HMDS············································9 1．4．2光阻涂布··················································9 1．4．3软烤··················································一·．13 1．4．4晶边曝光WEE(WaferEdgeExposure)························14 1．4．5对准／曝光·············································一“14 1．4．6曝光后烘烤················································17 1．4．7显影···········”··”············一·················．．····18 1．4．8硬烤···················．．”···”·······”················．18 第五节光阻涂布与显影设备····························一·····“·19 1．5．1 Track机台及构造··········································19 1．5．2涂布机台及构造···········································20 1．5．3显影机台·················································Q1 第六节曝光设备·········一······一一·“”一···””····一．．·一一21 1．6．1 leveling系统··············································Q2 第七节解析度与聚焦深度································“····“23 第八节光罩相关技术············································24 第九节显影后的检查·····················“·····一“············25 1．9．1显影后检查步骤···········································．25 1．9．2显影后目检(ADI．After Inspection)····················．25 Develop 1．9．3 ADI的常见缺陷···········································．26 第二章典型焦距异常现象及其原因分析································28 第一节如何确定光刻参数········································28 2．1．1光阻的选择···············