压接式IGBT 器件封装结构对并联芯片开通电流的影响与抑制 - 电网技术.PDF

41 卷 3 期 电 网 技 术 Vol. 4 1 No. 3 20 17 年3 月 Power System Technology Mar. 20 17 文章编号：1000-3673 （20 17）03-0938-10 中图分类号：TM 85 文献标志码：A 学科代码：470 40 压接式IGBT 器件封装结构对并联芯片 开通电流的影响与抑制 唐新灵，涂浩，崔翔，赵志斌，张朋 1．新能源电力系统国家重点实验室(华北电力大学) ，北京市 昌平区 102206； 2．全球能源互联网研究院，北京市 昌平区 102209 ） Influence of Packaging Parasitics on Turn-on Current Sharing of Paralleled Chips in Press Pack IGBT TANG Xinling, TU Hao, CUI Xiang, ZHAO Zhibin, ZHANG Peng (1. State Key Laboratory of Alternate Electrical Power System With Renewable Energy Sources (North China Electric Power University), Changping District, Beijing 102206, China; 2. State Grid Smart Grid Research Institute, Changping District, Beijing 102209, China) 1ABSTRACT: In press pack IGBT, current imbalance between 验验证的方法，首先在压接式IGBT 器件各并联芯片驱动回 paralleled IGBT chips is caused by packaging parasitic 路参数一致的条件下，研究了发射极凸台布局对并联芯片开 parameters in case of consistent chip parameters. Part of the 通电流一致性的影响。其次，在发射极凸台布局完全对称的 IGBT chips suffers very large current overshoot, reducing safe 情况下，研究了栅极PCB 板不对称布局对各并联芯片开通 operating area of press pack IGBT. By using parameter 电流一致性的影响。最后，提出了一种可以改善各并联芯片 extraction software, circuit simulation and experiment, 开通电流一致性的双针+双层PCB 板的驱动结构，并分析了 influence of copper emitter pillars on transient current sharing 该结构的均流效果。 is analyzed in case of consistent drive circuit parameters. 关键词：压接式IGBT ；寄生电感；瞬态电流分布 Relationship between asymmetry of gate printed circuit board DOI 10.13335/j.1000-3673.pst.2016.1431 and current sharing in swit