铜互连工艺缺陷模式及其对集成电路良率的影响.pdfVIP

目 录 摘{要································································1 Abstract····························································2 弓I言·······························································．3 第一章铜互连工艺简介··············································．4 1．1为什么要使用铜互连工艺·····································．4 1．2铜互连工艺简介··············································5 第二章缺陷与良率···················································7 2．1良率·······················································．7 2．2缺陷与良率·················································．8 第三章铜互连工艺的缺陷模式及其对良率的影响························ll 3．1铜互连工艺的缺陷模式·······································11 3．2断开对良率的影响···········································12 3．2．1光学邻近效应矫正原理简介······························12 3．2．2扫描测试··············································13 3．2．3光学邻近效应矫正欠补偿引起扫描测试失效················14 3．3空洞对良率的影响···········································16 3．3．1 片上系统芯片和内建自测试·····························16 3．3．2 Shm00图和比特图·····································18 3．3．3 静态存储器结构和几种典型失效模式·····················19 3．3．4 空洞导致存储器内建自测试失效························．20 3．3．5 电解效应引起空洞缺陷模式····························．22 3．4短接对良率的影响··········································．23 3．4．1 高温测试············································．24 3．4-2全静态电流测试······································．24 3．4．3 光致电阻变化法······································．25 3．4．4 通孔短路导致全静态电流异常偏高······················．26 3．4．5 底部抗反射涂层涂覆异常导致通孔变形··················．27 第四章总结··································-····················29 参考文献···································-······················31 致谢······························································32 Damascene)。因为铜互 本论文首先简单介绍实现铜互连的双镶嵌工艺(Dual 连采用镶嵌工艺，与传统铝互连工艺完全不同，所以铜互连工艺的缺陷模式