党智敏-低热膨胀系数纳米碳化硅_聚酰亚胺复合薄膜的制备与性能.pdfVIP

28 　5 　　10 　2011 Acta Mater iae Comp ositae Sin ica Vol.28 No.5 October 2011 :1000-3851(2011)05-004-1 05 / 1 *1, 2 吕　静 , 党智敏 (1. , 100029; 2. , 100083) 　:　/(n-SiC/ PI), S EM、 (TM A)、(T G)、 、。: SiC PI , (CTE) SiC , SiC 15%, CTE 11%, Kerner 。 , , 。 :　;;;; :　TB332;TM215. 3 　　　:　A Preparation and properties of nano-SiC/polyimide composite films with low thermal expansion characteristic 1 *1,2 L ÜJing , DANG Z imin (1. S tate Key Lab of C emical Resources Engineering, Beijing University of C emical Tec nology, Beijing 100029, C ina; 2. Department of Polymer Science and Engineering, Sc ool of C emistry and Biological Engineering, University of Science Tec nology Beijing, Beijing 100083, C ina) Abstract:　Nano-SiC /Polyimide (n-SiC/PI) composite films w ere prepared by using in-situ dispersive polymerization. T e surface morp ology, t ermal expansion, dielectric properties and t ermal stability of n-SiC/PI were studied by SEM, t ermal mec anical analysis (TMA), impedance analyzer and t ermal gravimetric analysis (TG)respectively . T e results s ow t at n-SiC particles are dispersed in t e PI matrix evenly by employing t e in- situ polymerization. T e coefficient of t ermal expansion (CTE)of n-SiC/PI composite films decreases w it t e increasing of t e SiC content, w ile t e experimental data could be analyzed by Kerner model closely. T e CTE of PI w it n-SiC mass fraction of 15% decrease about 11% t an t at of t e