znse-zns 歪 超格子の欠 陷生成 と界面の安定性 - j-stage.pdf

421 原 著 論 文 (6) ZnSe-ZnS　歪 超格子の欠 陥生成 と界面の安定性 世 古 口 麻 紀*・ 田 口 常 正 大阪大学工学部電気工学科 〒565大阪府 吹田市 山田丘2-1 (1989年3月20日 受 理) Defect Creation and the Stability of Hetero-Interfaces in ZnSe-ZnS Strained-Layer Superlattices Maki SEKOGUCHI* and Tsunemasa TAGUCHI Faculty of Engineering, Osaka University 2-1, Yamadaoka, Suita-shi, Osaka 565 (Received March 20, 1989) Photoluminescence (PL) and X-ray diffraction measurements have been performed to investigate the effects et thermal annealing and ion irradiation on the interface properties of low-pressure MOCVD-grown ZnSe-ZhS strained-layer superlattices (SLSs). It is shown from the evaluation of PL linewidth that a fluctuation of the heterointerface between the ZnSe well and the ZnS barrier layers can be completely controlled, within one monolayer. In the present SLS, the interface cha- racteristics are retained against annealing in H2 atmosphere up to 580°C and no additional strain was observed. On the other hand, N+-ion irradiation and the subsequent annealing studies reveal that irradiation-induced defects quench the photoluminescence bands and consequently the fluctua- tion at the interface takes place. The results of Ar+-ion irradiation also suggest that such defects generation causes an additional fluctuation of the interface from about one monolayer to two monolayer. ン ドギャ ップが変化す るため,こ の井戸層の厚 さ(Lw) 1. は じ め に