绝缘栅双极型晶体管(IGBT)的保护（Protection of the insulated gate bipolar transistor (IGBT)）.docVIP

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绝缘栅双极型晶体管(IGBT)的保护（Protection of the insulated gate bipolar transistor (IGBT)）.doc

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绝缘栅双极型晶体管(IGBT)的保护（Protection of the insulated gate bipolar transistor (IGBT)）

绝缘栅双极型晶体管(IGBT)的保护（Protection of the insulated gate bipolar transistor (IGBT)） Insulated gate bipolar transistor IGBT is composed of MOSFET and bipolar transistor composite of a device, its input is extremely MOSFET, output is extremely PNP transistor, therefore, can make it as a MOS type darlington tube. It blends the two devices, the advantages of both a MOSFET device driving the advantages of simple and rapid, and has the advantages of large capacity of bipolar devices, therefore, in the modern power electronic technology has been more and more widely used. In the switching power supply device of high power, IGBT has gradually replaced the thyristor or GTO because of its simple control drive circuit, high frequency and high capacity. But in switching power supply device, because it works in high frequency and high voltage, high current conditions, making it easy to damage, in addition, the power supply as a system level before, due to the power grid volatility, lightning and other reasons make the influence of it on the stress is bigger, so the reliability of IGBT is directly related to the reliability of power supply. Therefore, in selecting IGBT, the protection design of IGBT is also a key consideration in the design of power supply. How IGBT works If the driving positive voltage is added between the gate of IGBT and the emitter, MOSFET leads, so that the collector of PNP transistor is in a low impedance state with the base pole, which leads to the transistor conductance; If the voltage between the gate of IGBT and the emitter is 0V, the MOSFET cut-off, cutting off the supply of the base electrode current of the PNP transistor, makes the transistor cut-off. Thus, the safety and reliability of IGBT mainly depends on the following factors: - voltage between IGBT gate and emitter; - voltage between IGBT collector and emitter; - current of the IGBT collector - emitter; Temperature of IGBT. If the voltage between the IGBT gate and emitter, the driving voltage is too