MMIamp;OBIRCH原理及应用.pptVIP

OBIRCH的基本原理 OBIRCH lock-in简介 OBIRCH的应用及实际失效案例分析 EMMI的基本原理 Advanced EMMI (InGaAs)简介 EMMI的应用及实际失效案例分析 OBIRCH与EMMI的区别 * Comparison of C-CCD/MCT/InGaAs2 * FAB1 FAI EMMI Emission Leakage at PN junction ESD Damage Hot Carrier Leakage at Oxide Tunneling current/Avalanche breakdown FAB2 PHEMOS-1000 InGaAs Sub defects such as Crystal defects, stacking faults, mechanical damage junction leakage contact spiking hot electrons, saturated transistors latch-up oxide current leakage polysilicon filaments EMMI and InGaAs * OBIRCH的基本原理 OBIRCH lock-in简介 OBIRCH的应用及实际失效案例分析 EMMI的基本原理 Advanced EMMI (InGaAs)简介 EMMI的应用及实际失效案例分析 OBIRCH与EMMI的区别 * Real Case Study Case1：SW TDDB ISD Analysis STI corner breakdown was observed at the EMMI spot MVP #1 MVP #2 EMMI FIB FIB cutting FIB cutting * Real Case Study Case2：QH619C Logic Function Analysis Word line poly break was found at EMMI spot * Real Case Study Case3： HX0050AA ESD Failure Analysis Report ESD damage was found at specifically position of ESD circuit * OBIRCH的基本原理 OBIRCH lock-in简介 OBIRCH的应用及实际失效案例分析 EMMI的基本原理 Advanced EMMI (InGaAs)简介 EMMI的应用及实际失效案例分析 OBIRCH与EMMI的区别 * Difference between IR-OBIRCH and EMMI * Comparison of LCD/OBIRCH and EMMI 设备 原理 模式 应用范围 优点 缺点 图例 LCD（Liquid crystal detection） Thermo emission detection 被动式 1. Impurity、defect and ESD Damage induced leakage current 2. Abnormal distributing of current 3. Leakage at Oxide 4. Latch up 设备简易，成本低，热点不易被厚铝阻挡 灵敏度较差：hot spot能量 ≧1uW才能被探测到； 仅能做正面分析； 液晶有毒性； OBIRCH（Optical beam induced resistance change） Beam induced thermo effect 主动式 1. Leakage path 2. Defects in the metal (void, Si nodule) 3. Abnormal resistance (material, structure) 4. Functional failure （need to link ATE） 灵敏度较高，附属装置lock-in可以有效提高信噪比；操作方便快速；可作背面分析；无毒性 设备价格高昂（〉800，000USD）；对于厚铝产品laser穿透性较差 PEM (Photo emission ) Photo emission detection 被动式 1. Sub defects such as Crystal defects, stacking faults, mechanical damage 2. junction leakage 3. contact spiking 4. hot electrons, saturated transistors 5. latch-up 6. oxide