论文 Al doping effect on microstructure, electrical properties.pdfVIP

J Mater Sci: Mater Electron (2009) 20:718–726 DOI 10.1007/s10854-008-9793-z Al doping effect on microstructure, electrical properties, dielectric characteristics, and aging behaviors of ZPCCY-based varistors Choon-W. Nahm Received: 14 June 2008 / Accepted: 21 August 2008 / Published online: 13 September 2008 Springer Science+Business Media, LLC 2008 Abstract The Al doping effect on the microstructure, boundary, the doped ZnO ceramics can be considered as a electrical properties, dielectric characteristics, and aging multi-junction device composed of many series and parallel behaviors of ZPCCY-based varistors was investigated in connection of grain boundaries. The grain size distribution the range of 0.0–0.1 mol%. The breakdown electric field in plays a major role in electrical behavior. Electrically, ZnO the E-J characteristics decreased in a wide range from varistors exhibit highly nonlinear voltage-current (V–I) 4,921 to 475 V/cm with increasing amounts of Al O . The properties expressed by the relation I = KVa, where K is a 2 3 nonlinear properties were improved by increasing amounts constant and a is the nonlinear coefficient, which charac- of Al2O3 up to 0.005 mol%, whereas the further additions terizes the nonlinear properties of varistors [ 1, 2]. caused it to decrease. The highest nonlinear coefficient When ZnO varistors are biased, some grains are forward (a = 45.2) was obtained when Al2O3 concentration is biased and some are reverse biased. As the voltage is 0.005 mol%. The Al2O3 acted as a donor due to the increased, a growing number of the reverse biased grains increase of electron concentration in the small range of exhibit reverse avalanche and begin