《Electronic Circuit Design1模拟电子技术》MOSFETs Appendix 3A.pdfVIP

3A.1 EE-1029 APPENDIX 3A 3A.1 Metal Oxide Silicon FET - MOSFET The Metal Oxide Silicon transistor or MOSFET can be thought of as a sandwich consisting of a thin layer of ‘filling’ made of very pure silicon dioxide (SiO2) placed between two conducting ‘plates’. Historically one of the plates was made of metal and the other comprised the crystalline silicon substrate on which the device was built. These days, however, the metal plate has been replaced by one made of polycrystalline silicon or polysilicon . The MOS sandwich is really a POLYSILICON capacitor; the upper plate is called GATE ELECTRODE GATE OXIDE (SiO ) the gate electrode and the lower one 2 is the substrate. The silicon dioxide filling is referred to as the gate oxide and acts as the insulating dielectric between the capacitor plates. The basic structure of the MOS capacitor is illustrated in IMPURITY-DOPED CRYSTALLINE figure 3A.1 in which the substrate is SILICON SUBSTRATE shown as being made of single- crystal silicon which has been doped with p- or n- type impurities in order to make it semi-conducting. Figure 3A.1 MOS Capacitor The polysilicon is also heavily doped with impurities so that it becomes a (semi-) conductor too. To complete the MOS transistor structure, on either side of the capacitor sandwich are placed conducting terminals called the source and drain. These are formed by diffusing or implanting n-type (for an n-channel MOSFET) or p-type (for a p-channel MOSFET) dopant impurities into the silicon substrate. Note that the polarity of the substra