《Electronic Circuit Design1模拟电子技术》Week 24S.pdfVIP

Week Number 24 Subject Code EE-1029 Subject Electronic Circuit Design 1 Lecturer Prof Hicks KEY POINTS The MOS transistor must be biased to operate in its active region if it is to function correctly as an amplifier. Biasing involves applying a dc voltage between the gate and source terminals which is greater than the MOSFET threshold voltage VT and causes the transistor to operate in its saturation region. A quiescent drain current IDS flows through the transistor and through the load resistor connected to its drain. The design of the bias circuit aims to establish a suitable quiescent operating point for the amplifier – normally this involves setting the drain voltage at a level that will permit equal positive and negative voltage excursions to occur at the output. With the transistor biased to operate in its active region any variations in the voltage applied to the gate will lead to variations in the drain current. The transconductance of the transistor gm is defined as the rate of change of drain current with gate-source voltage. The input resistance of the MOSFET is very high (1GΩ) and so the input resistance of the amplifier is determined simply by the parallel combination of the two potential divider bias resistors R and R . 1 2 Capacitors C and C are dc blocking capacitors and are present to avoid the 1 2 dc bias voltages associated with the transistor from interfering with other circuits connected to the amplifier