《Electronic Circuit Design1模拟电子技术》Week 25S.pdfVIP

Week Number 25 Subject Code EE-1029 Subject Electronic Circuit Design 1 Lecturer Prof Hicks KEY POINTS Understand the origin of the expression IC = αIE for the bipolar junction transistor (BJT), and the relationship between α and the current gain β. Interpret the main device characteristics for the BJT (collector characteristic and transfer characteristic) and identify the principal regions of operation of the device (cut-off, active region and saturation). Use the load line principle with the collector characteristic of the BJT to establish the quiescent operating point for a simple common-emitter amplifier. Appreciation of the need to bias the transistor in order to establish the correct operating point, and knowledge of the design principles that underpin the potential divider bias circuit for a common-emitter amplifier. Stabilisation of the bias point against variations in transistor parameters such as β or VBE by means of negative feedback generated using an emitter resistor. Know how to derive the transconductance of the BJT by differentiating the Ebers Moll equation for the p-n junction. Appreciate the fact that the transconductance of the BJT depends only on the collector current and the temperature of the device: dI C 1 ⎡ VBE ⎤ ⎢I S exp ⎥ g m dV V V BE T ⎣ T ⎦ dI I I