磁控溅射制备非晶铟镓锌氧化物薄膜的电学性能研究-材料研究学报.PDF

第29 卷 第1 期 材 料 研 究 学 报 Vol. 29 No. 1 2 0 1 5 年 1 月 CHINESE JOURNAL OF MATERIALS RESEARCH January 2 0 1 5 磁控溅射制备非晶铟镓锌氧化物薄膜的 电学性能研究 曹明杰 赵 明 庄大明 郭 力 欧阳良琦 李晓龙 宋 军 (先进成形制造教育部重点实验室 清华大学材料学院 北京 100084) 摘要采用中频交流磁控溅射法制备非晶铟镓锌氧化物(IGZO)薄膜, 用XRD 、XRF 、Hall 测试等手段进行表征, 研究了溅射 电流、氧气流量等工艺参数对其电学性能的影响。结果表明, 制备出的IGZO 薄膜均为非晶结构, 成分与靶材基本一致, 电学 性能对溅射电流不敏感, 而氧气流量的改变可显著影响薄膜的载流子浓度和Hall 迁移率。随着氧气流量的增加, 薄膜的载 流子浓度先增加后减小, 而Hall 迁移率随着载流子浓度的提高而增加。透过率随着氧气流量的增大先提高然后稳定在90% 以上。 关键词 无机非金属材料, IGZO 薄膜, 非晶态半导体, 磁控溅射, 迁移率 分类号 TB321, TN304, O484 文章编号 1005-3093(2015)01-0051-04 Electronic Properties of Amorphous Indium-gallium-zinc Oxide Thin Film Fabricated by Magnetron Sputtering CAO Mingjie ZHAO Ming ZHUANG Daming* GUO Li OUYANG Liangqi LI Xiaolong SONG Jun (Key Lab of Advanced Processing and Manufacturing, Ministry of Education, School of Materials Science and Engineering, Tsinghua University, Beijing 100084, China) Manuscript received July 8, 2014; in revised form August 25, 2014. *To whom correspondence should be addressed, Tel:(010 E-mail:dmzhuang@tsinghua.edu.cn ABSTRACT Amorphous indium-gallium-zinc oxide (a-IGZO) thin films were fabricated using mid-fre- quency AC magnetron sputtering deposition with variable oxygen flow rate and sputtering current. The in- fluence of processing parameters on the electronic properties of the films was investigated by means of analyses of XRD and XRF, as well as Hall Effect measurement. The results show that all the samples are amorphous with compositions roughly equal t