Read Noise Distribution Modeling for CMOS （阅读对CMOS噪声分布建模）.pdf

Read Noise Distribution Modeling for CMOS Image Sensors Boyd Fowler, Dan McGrath, and Peter Bartkovjak BAE Systems Imaging Solutions, 1801 McCarthy Blvd., Milpitas, CA 95035 USA  Abstract—We report on an empirical model that describes the read noise statistics in CMOS image sensors. This model includes pixel-to-pixel variations in thermal, 1/f and RTS noise. It is based on the “unlucky pixel” concept where the source- follower FET channel is dominated by a single sub-channel and that RTS is due to the interactions of uniformly-distributed defects to this. In addition, we compare this model to measure data, and discuss how the read noise distribution is affected by various model parameters. I. INTRODUCTION Temporal read noise is ideally dominated by thermal noise from the pixel source follower and is identically distributed (IID) for each pixel. However, when the readout noise is characterized in actual devices the noise power for each pixel is different. Figure 1 shows a typical read noise histogram Figure 2: CMOS Image Sensor Read Noise 1-Cummulative from a CMOS image sensor, and Figure 2 shows the Distribution Function corresponding one minus the cumulate distribution function [1, 2]. As shown in Figures 1 and 2, when the input referred read The fundamental noise source in MOSFETs is Johnson noise of each pixel is plotted on a histogram a long tail is noise caused by the thermal agitation of electrons in the shown at the high end of the distribution. This is attributed t