Chemical Vapor Deposition University of （化学汽相淀积,大学）.pdf

Chemical Vapor Deposition Chemical Vapor Deposition Dr. Philip D. Rack Assistant Professor Department of Materials Science and Engineering The University of Tennessee Tel (865) 974-5344 Fax (8654) 974-4115 Prack@utk.edu Page 1 Chemical Vapor Deposition Step Coverage of CVD Films High Surface Migration rate Low Surface Migration Rate Conformal coating Arrival Angle θ = 180° θ = 270° θ = 90° Flux is a function of arrival angle (θ) Page 2 Chemical Vapor Deposition Flow of Phospho-Silicate Glass (PSG), Boro-Silicate (BSG) or BPSG Flow - Elevated temperature step to close pin-holes and smooth out topography More flow (lower glass viscosity @ high temperatures) for higher phosphorus content (% by weight) A re-entrant profile can cause opens or stringers after etching gap Re-entrant profile If you do fill it in, you may get an Etch Stringer Sem cross-sections (10,000X) of samples annealed in steam at 1100°C for 20 min for the following weight of phosphorus: (a) 0.0 wt. % P; (b) 2.2 wt. % P; (c) 4.6 wt. % P; (d) 7.2 wt. % P. Reference: Silicon Processing for the VLSI Era Vol. 1 by Wolf and Tauber, page 187