Radiation Damage Effects in Silicon - Recent Developments, Models and Scenarios课件.ppt

Radiation Damage Effects in Silicon - Recent Developments, Models and Scenarios;Overview;Silicon Detectors in HEP Experiments - Overview;Each 2D pixel is connected to one readout cell First prototypes: ~ 1990 Currently applied technology: hybrid pixel detectors (R.O. ASICs are connected to a sensor via flip chip bonding) Different “flavours”, e.g.: N-in-n Bias grids Recent developments: monolithic detectors Material budget: ~sensor + ASIC Unambiguous 3D track information, ideal for high track density environment Usually not too large areas, large number of r.o. channels;Silicon detectors were/are used in practically all HEP experiments to provide precise tracking information. In collision experiments the high density track region is usually covered by pixel detectors followed at larger radii by strip detectors.;坐荡熙毛辈炼肚篮瓷味傅田甭刽酬甲榷头吭列居浑琳搽喳烂悄遍航肚授肮Radiation Damage Effects in Silicon - Recent Developments, Models and Scenarios课件Radiation Damage Effects in Silicon - Recent Developments, Models and Scenarios课件;Silicon Detectors in LHC Experiments;ATLAS SCT - ? H. Pernegger;Radiation Environment in LHC Experiments;Simulations show high radiation levels over 10 years Up to 50 Mrad and 1.5 1015 1 MeV neq/cm2; TID Fluence 1MeV n eq. [cm-2] @ 10 years ATLAS Pixels 50 Mrad 1.5 x 1015 ATLAS Strips 7.9 Mrad 2 x 1014 CMS Pixels ~24Mrad ~6 x 1014 * CMS Strips 7.5Mrad 1.6 x 1014 ALICE Pixel 250krad 3 x 1012 LHCb VELO - 1.3 x 1014/year** All values including safety factors. *Set as limit, inner layer reaches this value after ~2 years **inner part of detector (inhomogeneous irradiation );Radiation Environment in LHC Experiments;Surface Damage;Cumulative Effects: TID (total ionising dose) Displacement Damage (NIEL);Ionization in the SiO2 layer: Fixed positive oxide charge Accumulation of electrons at the interface Additional interface states are created at the SiO2-Si border ;Using a 0.25μm CMOS process reduces th-shift.;Enclosed geometrie to avoid leakage; Techn