超大规模集成电路铜互连电镀工艺（VLSI interconnect copper plating process）.docVIP

超大规模集成电路铜互连电镀工艺（VLSI interconnect copper plating process） 1. dual damascene copper interconnect process With the chip integration increasing, copper has replaced the aluminum interconnect technology has become the mainstream in the VLSI manufacture. As a substitute for aluminum, copper wire can reduce the interconnect impedance, reduce power consumption and cost, improve the integration of the chip, the device density and clock frequency. Because of the copper etching is very difficult, so the copper interconnect using dual Damascene technology, also called Double Technology (Dual Damascene), Damascus 1) first deposited a thin layer of silicon nitride (Si3N4) as a diffusion barrier layer and etching termination layer, 2) then in the silicon oxide deposited on a certain thickness (SiO2), 3 then the micro hole) lithography (Via), 4) on the through hole part etching, 5) after a trench lithography (Trench), 6) to complete etched vias and trenches, 7) followed by sputtering (PVD) diffusion barrier layer (TaN/Ta) and copper seed layer (Seed Layer). The role of Ta is to enhance the adhesion of Cu and the seed layer is used as a conductive layer plating, 8) after the plating process is the copper interconnects, 9) is the final annealing and chemical mechanical polishing (CMP), flattened processing and cleaning of copper coating. Electroplating is the main process of copper interconnection. Integrated circuit copper electroplating process is usually used plating in sulfate system, plating solution composed of copper sulfate, sulfuric acid and water, pale blue. When power is applied in copper (anode) and silicon (cathode) when the solution generated in the current and the electric field. The anode copper reacts into copper ions and electrons, and the cathode also reacts with formation deposited on the silicon surface of copper ions and electrons near the cathode, copper ions under the influence of the electric field from the anode to the cathode, and the concentration of the