原创力文档meh-ppv多层结构器件的制备及其谱红移和窄化 fabrication and spectral redshift and line-narrowing of meh-ppv multilayer devices.pdfVIP
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meh-ppv多层结构器件的制备及其谱红移和窄化 fabrication and spectral redshift and line-narrowing of meh-ppv multilayer devices
光电子·澈光
第17卷第8期2006年8月 Journal V01．17No．8Aug．2006
ofOptoelectronics·Laser
MEH—PPV多层结构器件的制备及其谱红移和窄化*
章 勇～，范广涵
(华南师范大学光电子材料与技术研究所，广东广州610631)
nm
发光峰的窄化和红移。该器件使MEH—PPV发射峰的半高宽(FWHM)由纯MEH—PPV单层的91
减小到32nm，发光峰相对于MEH—PPV单层的582nm红移了20nm，相应的色坐标(CIEl931)由单层
的(o．56，0．33)变为(o．62，0．38)。这种窄化和红移归为聚合物多层界面间的共混稀释效应。
关键词：电致发光(EL)；聚合物多层；半高宽(FWHM)；红移
中图分类号：TN383+．1文献标识码：A 文章编号：1005—0086(2006
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