同质缓冲层对zno薄膜光学性质的影响 influence of homo-buffer layers on optical properties of zno thin films.pdfVIP

第 7 期 电 子 元 件 与 材 料 Vol.25 No.7 2006 年 7 月 ELECTRONIC COMPONENTS MATERIALS Jul. 2006 研研 究究 与与 试试 制制 研研 究究 与与 试试 制制 R D 同质缓冲层对 ZnO 薄膜光学性质的影响 朱慧群 1 丁瑞钦 1 蔡继业 2 胡 怡 2 摘要 : (0002)ZnO XRD AFM ZnO 200 5 min ZnO 450 ZnO ZnO 关键词 : ZnO PL 中图分类号: O472.3; TB383 文献标识码 :A 文章编号 :1001-2028 2006 07-0048-04 Influence of Homo-buffer Layers on Optical Properties of ZnO Thin Films 1 1 2 2 ZHU Hui-qun , DING Rui-qin , CAI Ji-ye , HU Yi (1. Institute of Thin Films and Nano-materials, Wuyi University, Jiangmen 529020, China; 2. Department of Chemistry, Jinan University, Guangzhou 510632, China) Abstract: (0002) orientated ZnO films were deposited on silicon substrates by radio frequency (RF) magnetron sputtering technique. The samples were investigated by X-ray diffraction, atomic force microscope, optical absorption and photoluminescence (PL) spectra. It is discovered that the homo-buffer layer at low temperature can reduce the lattice distortion caused by lattice misfit and difference of the thermal expansion coefficients. The structure, surface morphology and optical properties of the ZnO films which are deposited at 450 on homo-buffer layer fabricated at 200 are improved significantly. Key words: semiconductor technology; RF magnetron sputtering; ZnO thin films; homo-buffer layer; PL spectrum 六方纤锌矿结构的 ZnO 是一种自激活直接型宽 尽管人们期望在硅衬底上制备出高质量的 ZnO 禁带化合物半导体材料 具有优异的