fabrication and characterization of copper system compound semiconductor solar cells铜系统的制造和表征化合物半导体太阳能电池.pdfVIP

fabrication and characterization of copper system compound semiconductor solar cells铜系统的制造和表征化合物半导体太阳能电池.pdf

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fabrication and characterization of copper system compound semiconductor solar cells铜系统的制造和表征化合物半导体太阳能电池

Hindawi Publishing Corporation Advances in Materials Science and Engineering Volume 2010, Article ID 562842, 11 pages doi:10.1155/2010/562842 Research Article Fabrication and Characterization of Copper System Compound Semiconductor Solar Cells Ryosuke Motoyoshi, Takeo Oku, Atsushi Suzuki, Kenji Kikuchi, Shiomi Kikuchi, Balachandran Jeyadevan, and Jhon Cuya Department of Materials Science, The University of Shiga Prefecture, 2500 Hassaka, Hikone, Shiga 522-8533, Japan Correspondence should be addressed to Takeo Oku, oku@mat.usp.ac.jp Received 19 March 2010; Revised 14 June 2010; Accepted 12 July 2010 Academic Editor: Meilin Liu Copyright © 2010 Ryosuke Motoyoshi et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited. Copper system compound semiconductor solar cells were produced by a spin-coating method, and their cell performance and structures were investigated. Copper indium disulfide- (CIS-) based solar cells with titanium dioxide (TiO2 ) were produced on F-doped SnO2 (FTO). A device based on an FTO/CIS/TiO2 structure provided better cell performance compared to that based on FTO/TiO /CIS structure. Cupric oxide- (CuO-) and cuprous oxide- (Cu O-) based solar cells with fullerene (C ) were also 2 2 60 fabricated on FTO and indium tin oxide (ITO). The microstructure and cell performance of the CuO/C60 heterojunction and the Cu O:C bulk heterojunction structure were investigated. The photovoltaic devices based on FTO/CuO/C and ITO/Cu O:C

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