exploration of the direct use of anodized alumina as a mold for nanoimprint lithography to fabricate magnetic nanostructure over large area探索直接使用阳极氧化的铝作为nanoimprint光刻制造的模具在大面积磁纳米结构.pdfVIP

exploration of the direct use of anodized alumina as a mold for nanoimprint lithography to fabricate magnetic nanostructure over large area探索直接使用阳极氧化的铝作为nanoimprint光刻制造的模具在大面积磁纳米结构.pdf

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exploration of the direct use of anodized alumina as a mold for nanoimprint lithography to fabricate magnetic nanostructure over large area探索直接使用阳极氧化的铝作为nanoimprint光刻制造的模具在大面积磁纳米结构

Hindawi Publishing Corporation Journal of Nanotechnology Volume 2011, Article ID 961630, 5 pages doi:10.1155/2011/961630 Research Article Exploration of the Direct Use of Anodized Alumina as a Mold for Nanoimprint Lithography to Fabricate Magnetic Nanostructure over Large Area M. Tofizur Rahman, Hao Wang, and Jian-Ping Wang MINT Center, Department of Electrical and Computer Engineering, University of Minnesota, 200 Union Street SE, Minneapolis, MN 55108, USA Correspondence should be addressed to Jian-Ping Wang, jpwang@ Received 4 August 2011; Accepted 24 August 2011 Academic Editor: Chuan Jian Zhong Copyright © 2011 M. Tofizur Rahman et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited. We have explored the direct use of anodized alumina (AAO) fabricated on an Si wafer as a mold for the nanoimprint lithography (NIL). The AAO mold has been fabricated over more than 10 cm2 area with two different pore diameters of 163 ± 24 nm and 73 ± 7 nm. One of the key challenges of the lack of bonding between the antisticking self-assembled monolayer (SAM) and the AAO has been overcome by modifying the surface chemistry of the fabricated AAO mold by coating it with thin SiO2 layer. Then we have applied the commonly used silane-based self-assembled monolayer (SAM) on these SiO2 -coated AAO molds and achieved successful imprinting of resist pillars with feature size of 172 ± 25 nm by using the mold with a pore diameter of 163 ± 24 nm. Finally, we have achieved (001) oriented L10 FePt patterned structure with a dot diameter of 42 ±4 nm by using a AAO mold with a pore diameter of 73 ±7 nm. The perpendic

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