HfO2薄膜的离子束刻蚀特性研究.pdfVIP

12 5 Vol . 12 No . 5 2004 10 Optics and P recision Eng ineering Oct . 2004 1004924X 2004) 0504 5405 Hf O2 1, 2 1 1 1 1 王旭迪 , 徐向东 , 刘 颖 , 洪义麟 , 付绍军 1. 中国科学技术大学 国家同步辐射实验室, 安徽 肥230026; 2 . 肥工业大学机械与汽车工程学院, 安徽 肥230009) : Hf O2 AZ 1350 A r , ; , AFM T apping Hf O2 , , ; , HfO 2 , Hf O / SiO 2 2 : HfO 2 薄膜; 离子束刻蚀; 刻蚀速率; 图形转移; 表面质量 : O4 63 . 2 : A Ion beam etching of HfO film 2 1, 2 1 1 1 1 WAN G Xudi , XU Xiangdong , L IU Y ing , HON G Y ilin , F U Shaojun (1. National Synchrotron Radiation Lab, USTC, Hef ei 230026, China; 2. Faculty of Mechanical and Automobile ngineering, H F UT, Hef ei 230009, China) Abstract: T he ion beam et ching of Hf O2 f ilm and AZ 1350 photoresisit mask w ere invest ig at ed in argon. T he et ch rate and mechanisms w ere measured and analyzed as a funct ion of ion energy, ion beam densit y and ion incidence angle. T he equat ions of etch rate versus such parameters w ere developed by t he least squarefit . T he fidelit y pat tern t ransfer of mask and substrate w ere analy zed w it h t he et ching dept h . T he surface qualit y before and aft er etching w ere examined w ith A FM tapping mode. T he det ails of et ch rate have been int erpreted in t erms of mechanism of etching. T he results show t hat et ch rat e has linear depen dence on square root ion energy and ion density and