si基gan薄膜的制备方法及结构表征 preparation techniques and microstructure characterization of gan films grown on si substrates.pdfVIP

显徽、测量、徽细加工技木与设备 Microscope。Measurement，MicrofabricatiOn＆Equipment Si基GaN薄膜的制备方法及结构表征 张敬尧，李玉国，崔传文，张月甫，卓博世 (山东师范大学物理与电子科学学院，济南250014) 摘要：分别采用射频磁控溅射、热壁化学气相沉积(CVD)、电泳沉积法制备GaN薄膜。利用扫 描电镜(SEM)、荧光光谱仪对样品进行结构、形貌和发光特性的分析比较。射频磁控溅射方法 中，把SiC中间层沉淀到Si衬底上，目的是为了缓冲由GaN外延层和Si衬底的晶格失配造成的 应力。结果证实了SiC中间层提高了GaN薄膜的质量。热壁化学气相沉积法制备GaN晶体膜时， 选择H：作反应气体兼载体，有利于GaN膜的形成。电泳沉积法显示所得样品为六方纤锌矿结构 用范围广；电泳沉积法操作方便、简单易行。 关键词：GaN薄膜；Si基；溅射；化学气相沉积；电泳沉积 andMicrostructure PreparationTechniques ofGaNFilmsGrownonSiSubstrates Boshi Jingyao，LiYuguo，Cui Yuefu，Zhuo Zhang Chuanwen，Zhang and Normal (Co／／egeofPhysicsElectronics，ShandongUniversity,Jl黼250014，China) on substrateswere hot—wall Abstract：GaNfilms Si obtained chemical grown by vapordeposition and microstructureandthe (CVD)，magnetronsputteringelectrophoretiedepositiontechniques．The werecharacterized electron opticalproperties byscanning microscopy(SEM)and ordertoreleasethelattieemismatchbetweensubstratesand SiCfilmsas rPL)．In epitaxylayer,thin intermediatewere ontothesubstratewith resultsindicate layers deposited magnetronsputtering．’nle the effectoftheintermediateonGaN results that ascarrier films．Preliminary H2 positive layer suggest all atthe of role same the GaNfilmswithCVD．GaN gasplaysimportant