robustness comparison of emerging devices for portable applications鲁棒性的比较新兴设备为便携式应用程序.pdf

Hindawi Publishing Corporation Journal of Nanomaterials Volume 2012, Article ID 242459, 8 pages doi:10.1155/2012/242459 Research Article Robustness Comparison of Emerging Devices for Portable Applications S. D. Pable,1 Mohd. Ajmal Kafeel,2 A. K. Kureshi,3 and Mohd. Hasan2 1 Department of Electronics and Telecommunication Engineering, P.D.V.V.P College of Engineering, Ahmednagar 414 111, India 2 Department of Electronics Engineering, AMU, Aligarh, India 3 Vishwabharati Acadmey’s COE, Sarola Baddi, Ahmednagar, India Correspondence should be addressed to S. D. Pable, sachinp 79@yahoo.co.in Received 4 October 2011; Accepted 15 November 2011 Academic Editor: Christian Brosseau Copyright © 2012 S. D. Pable et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited. Extensive development in portable devices imposes pressing need for designing VLSI circuits with ultralow power (ULP) consumption. Subthreshold operating region is found to be an attractive solution for achieving ultralow power. However, it limits the circuit speed due to use of parasitic leakage current as drive current. Maintaining power dissipation at ultralow level with enhanced speed will further broaden the application area of subthreshold circuits even towards the field programmable gate arrays and real-time portable domain. Operating the Si-MOSFET in subthreshold regions degrades the circuit performance in terms of speed and also increases the well-designed circuit parameter spreading due to process, voltage, and temperature variations. This may cause the subthreshold circuit failure at very low supply voltage. It is ess