some investigations on the anisotropy of the chemical etching of (hk0) and (hhl) silicon plates in a naoh 35% solution. part i 2d etching shapes一些调查的各向异性(hk0)和(hhl)的化学蚀刻硅板在35%氢氧化钠溶液。.pdf

Active and Passive Elec. Comp., 2001, Vol. 24, pp. 31-56 (C) 2001 OPA (OverseasPublishers Association) N.V. Reprints available directly from the publisher Published by license under Photocopying permitted by license only the Gordon and Breach Science Publishers imprint, member of the Taylor Francis Group. SOME INVESTIGATIONS ON THE ANISOTROPY OF THE CHEMICAL ETCHING OF (hk0) AND (hhl) SILICON PLATES I: IN A NaOH 35% SOLUTION. PART 2D ETCHING SHAPES C. A. HODEBOURGa and C. R. TELLIERb’* aLaboratoire de Chronombtrie Electronique et Piezoblectricitb, Ecole Nationale Supbrieure de Mbcanique et des Microtechniques, 26 chemin de l’Epitaphe, 25030 Besanfon cbdex France; blnstitut des Microtechniques de Franche-Comtb, Avenue de l’Observatoire, 25030 Besanfon cdex France (Received1 February 2001; In finalform 19 March 2001) In this paper a study of the anisotropic dissolution of (hk0) and (hhl) silicon plates in a NaOH 35% solution is undertaken. Effects of orientation on firstly, the geometrical features ofetched surfaces and secondly, on the cross-sectional shape of starting circular plates are systematically investigated. Conclusions ofpractical interest on the roughness ofetched (hk0)and (hhl)planes are drawn. 2D etching shapes are then analysed in terms of the tensorial model for the anisotropic dissolution and of dissolution criteria. Finally a comparative analysis of results related on the one hand, to 2D surface profiles and on the other, to out-of-roundness profiles is made. This comparison shows that shapes observed for profilometry traces agree with theoretical shapes as derived when we use