dissecting and circumventing the requirement for ram in csl-dependent notch signaling解剖和规避要求ram csl-dependent notch信号.pdfVIP

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dissecting and circumventing the requirement for ram in csl-dependent notch signaling解剖和规避要求ram csl-dependent notch信号.pdf

dissecting and circumventing the requirement for ram in csl-dependent notch signaling解剖和规避要求ram csl-dependent notch信号

Dissecting and Circumventing the Requirement for RAM in CSL-Dependent Notch Signaling Scott E. Johnson, Douglas Barrick* T.C. Jenkins Department of Biophysics, The Johns Hopkins University, Baltimore, Maryland, United States of America Abstract The Notch signaling pathway is an intercellular communication network vital to metazoan development. Notch activation leads to the nuclear localization of the intracellular portion (NICD) of the Notch receptor. Once in the nucleus, NICD binds the transcription factor CSL through a bivalent interaction involving the high-affinity RAM region and the lower affinity ANK domain, converting CSL from a transcriptionally-repressed to an active state. This interaction is believed to directly displace co-repressor proteins from CSL and recruit co-activator proteins. Here we investigate the consequences of this bivalent organization in converting CSL from the repressed to active form. One proposed function of RAM is to promote the weak ANK:CSL interaction; thus, fusion of CSL-ANK should bypass this function of RAM. We find that a CSL-ANK fusion protein is transcriptionally active in reporter assays, but that the addition of RAM in trans further increases transcriptional activity, suggesting another role of RAM in activation. A single F235L point substitution, which disrupts co-repressor binding to CSL, renders the CSL-ANK fusion fully active and refractory to further stimulation by RAM in trans. These results suggest that in the context of a mammalian CSL-ANK fusion protein, the main role of RAM is to displace co-repressor proteins from CSL. Citation: Johnson SE, Barrick D (2012) Dissecting and Circumventing the Requirement for RAM in CSL-Dependent Notch Signaling. PLoS ONE 7(8): e39093. doi:10.1371/journal.pone.0039093 Editor: Henry H. Roehl, University of Sheffield, United Kingdom Received February

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