three-dimensional statistical modeling of the effects of the random distribution of dopants in deep sub-micron nmosfets三维统计建模的影响的随机分布在深亚微米掺杂物nmosfets.pdfVIP

VLSI DESIGN (C) 2001 OPA (Overseas Publishers Association) N.V. 2001, Vol. 13, Nos. 1-4, pp. 425-429 Published by license under Reprints available directly from the publisher the Gordon and Breach Science Publishers imprint, Photocopying permitted by license only member of the Taylor Francis Group. Three-dimensional Statistical Modeling of