1200 v碳化硅mosfet在智能电网电力电子设备中的应用特性研究 research on application characteristics of 1 200 v sic mosfet in power electronic equipments for smart grid.pdfVIP

第4 卷 第7 期 智 能 电 网 Vol. 4 No. 7 2016 年7 月 Smart Grid Jul. 2016 DOI ：10.14171/j.2095-5944.sg.2016.07.002 文章编号：2095-5944 (2016) 07-0639-05 中图分类号：TM 23 文献标志码：A 1 200 V 碳化硅 MOSFET 在智能电网电力电子 设备中的应用特性研究 1 2 2 1 林翔 ，李金元 ，谢立军 ，孙凯 (1. 清华大学电力系统及发电设备安全控制和仿真国家重点实验室，北京市 海淀区 100084 ； 2. 全球能源互联网研究院，北京市 昌平区 102209) Research on Application Characteristics of 1 200 V SiC MOSFET in Power Electronic Equipments for Smart Grid 1 2 2 1 LIN Xiang , LI Jinyuan , XIE Lijun , SUN Kai (1. State Key Lab of Security Control and Simulation of Power Systems and Generation Equipments, Tsinghua University, Beijing 100084, China; 2. Global Energy Interconnection Research Institute, Changping District, Beijing 102209, China) ABSTRACT: Power electronic equipments are key elements for future smart grid development, which are used for the integration of renewable energy, HVDC transmission and power quality enhancement. The core component of power electronic equipment is power semiconductor device. The performances of traditional Silicon semiconductor devices (i.e. IGBT and power MOSFET, etc.) have almost reached its physical limits. The wide band-gap semiconductor devices, especially the SiC power devices, have excellent properties to fulfill the requirements of future smart grid for high-efficiency and high-performance power electronic equipments. In order to accurately understand and evaluate the influences of SiC power devices o