Z-中国材料研究学会.PDFVIP

Symposium Z Materials Simulation, Computation, and Design 材料模拟、计算与设计 2017 年7 月8-12 日 分会主席: 赵纪军 大连理工大学 刘利民 北京计算科学研究中心 陈星秋 中科院沈阳金属所 范晓丽 西北工业大学 吕广宏 北京航空航天大学 联系人： 周思 大连理工大学 电话 邮箱：sizhou@ Z. 材料模拟、计算与设计 分会主席：赵纪军、刘利民、陈星秋、范晓丽、吕广宏 Z-01 Charge transfer induced quantum anomalous Hall effect of non-Dirac electrons Zhongqin Yang, Yang Xue, Tong Zhou, Xinyuan Wei State Key Laboratory of Surface Physics and Key Laboratory for Computational Physical Sciences (MOE) Department of Physics, Fudan University, Shanghai 200433, China Many semiconductors have non-Dirac band dispersion with normal band order, i.e., the p/d-like band is below the s-like band. Whether the quantum anomalous Hall (QAH) effect, with potential applications in dissipationless or extremely low dissipation electronic transport, could be realized in these semiconductors is deserved to be investigated. Here, we predict a QAH effect in the heterostructure of a β-Cu2S monolayer grown on the (1 1 1) surface of MnSe substrate, with a sizeable nontrivial band gap. Interestingly, this QAH system does not have the special Dirac dispersion but quadratic bands with normal band order, inferring many ordinary semiconductors may own QAH states with this mechanism. The charge transfer between the Cu2S and the substrate is found to be critical to trigger the topological state in the system. A k·p model is employed to understand the effect. Keywords: quantum anomalous Hall effect; non-Dirac electron; charge transfer Z-02 TiSi 家族：拓扑狄拉克节线态与新型拓扑量子催化设计 陈星秋，李江旭，马会，封少波，李荣汉 中国科学院金属研究所沈阳材料科学国家（联合）实验室110016 拓扑节线态半金属具有体能带