第四讲 激子与发光.pptVIP

Photoluminescence spectroscopy Photoluminescence (PL) spectra: The sample is excited with a laser or lamp with photon energy greater than the band gap. The spectrum is obtained by recording the emission as a function of wavelength. Photoluminescence excitation spectroscopy (PLE): The luminescence intensity at the peak of the emission is measured as the excitation wavelength is scanned. * * GaN:Zn: excitation and emission spectra Principles of luminescence Interband luminescence Photoluminescence Electroluminescent * 第五讲 Interband Luminescence * General principles of electroluminescent devices Electroluminescence is the process by which luminescence is generated while an electrical current flows through an optoelectronic device. Two main types of devices: Light Emitting Diodes (LED) and Laser Diode (LD). Structure: epitaxial layer; p- and n-type region; active region. Mechanism: operated in forward bias; electron s and holes injection and recombination in active region. Be same as the photoluminescence and band gap determining the emission spectra (line emission at Eg with band width of ~kT). Commercial electroluminescent devices are therefore made from direct gap compounds. Three factors for the choice of materials: 1. band gap size; 2. lattice matching; 3. p-type doping. * Band gap of selected III-V semiconductors vs lattice constant “lattice matching” between the epitaxial layers and the substrate: if not, the formed dislocation will degrade the optical quality. Nitride? AlxGa1-xAs: 630-870nm, red and infrared LED; perfect lattice matching. GaxInl-xAsyPl-y:0.92 ~1.65?m, as light source for optical fiber communication ( operated at 1.55 and 1.3 ?m) GaxIn1-xN: The emission wavelength varied from 360 to 650nm, green and blue LED; Lattice matching and p-doping problems; p-type doping in wide band gap semiconductor will result in deep acceptor levels. And then the low hole density gives the layers a high resistivity, which causes ohmic heating when t