PCBA生产注意事项(二).pptVIP

(2) The Machine Model (MM) represents a worst case HBM. It provide more realisticsimulation of actual damage normally obtained from a person holding a tool. EOS/ESDAssociation Draft Standard DS5.2 –1993 describes use of the HBM for device classificationand has been released for comment. (3) The Charged Device Model (CDM) simulates the damage resulting from a charged devicecontacting a metal grounded surface. This failure mode is very damaging and is associatedwith automated handling equipment and use of dip tubes. EOS/ESD Association DraftStandard DS5.3 –1993 describes use of the CDM for device classification and has beenreleased for comment. 2. ESD保護線路不適當。 3. ESD管制不足。 a. 作業員未戴抗靜電環(接地腕帶)接觸IC。 b. 缺乏對所用材料的防靜電管制。 c. 工作站未接地。 d. 自動化系統的設計不當，致引起充電裝置模式失效，Ex : ICT, ATE, SMT……→ Chip Set 不良高。 e. 濕度低 (30% RH, 如在寒冷乾燥環境)。 4. 缺乏ESD警覺意識和訓練。 (可依JESD625-A及IPC-A-610C標準規範教育訓練) SEM photo of drain/gate diffusion edge damage SEM photo of silicon melting due to current filamentation in a nMOS output transistor SEM photo showing holes at the silicon to field oxide interface in the drain diffusion of an FOD protection device SEM photo of an nMOS transistor in an output buffer showing damage at the drain/gate diffusion edge. 5. ESD 不良品分析圖片： The SEM photograph of the contact burn out at ESD protection circuit of pad 60 (Lvref) forVT3091A device Pad60 (Lvref) Poly gate Poly gate a. VT3091A ESD_HBM pad60(Lvref) fail SEM photo of damage due to a polycrystalline filament in a trick oxide device. SEM photo of a contact hole in the drain diffusion of an output transistor showing contact spiking. b. VT3091A ESD_HBM pad63(VCC2) fail The OM and SEM photograph of the poly burn out at pad63 (VCC2) for VT3091A device Pad63 (VCC2) Pad63 (VCC2) Poly layer 1. 人 (注意：人體感染靜電可能超過 3000V)。 a. 戴抗靜電環(接地腕帶) (註：靜電放電時，約在1μs ~1ns時間內電荷消失)。 b. 或穿導電衣、鞋。(表面阻抗在10E5 ~ 10E9 歐姆) 2. 廣泛使用抗靜電或導電的直接材料和間接材料。 3. 建立靜電安全工作站、區。 4. 確保設備不會產生200V以上的靜電電壓。 5.