fabrication and characterisation of gaas gunn diode chips for applications at 77 ghz in automotive industry砷化镓耿氏二极管芯片制造和描述应用在汽车行业77 ghz.pdfVIP

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fabrication and characterisation of gaas gunn diode chips for applications at 77 ghz in automotive industry砷化镓耿氏二极管芯片制造和描述应用在汽车行业77 ghz.pdf

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fabrication and characterisation of gaas gunn diode chips for applications at 77 ghz in automotive industry砷化镓耿氏二极管芯片制造和描述应用在汽车行业77 ghz

Sensors 2006, 6, 350-360 sensors ISSN 1424-8220 © 2006 by MDPI /sensors Fabrication and Characterisation of GaAs Gunn Diode Chips for Applications at 77 GHz in Automotive Industry Arno Förster 1,*, Jürgen Stock 2,#, Simone Montanari 2,#, Mihail Ion Lepsa 2,3 and Hans Lüth 2 1 Aachen University of Applied Sciences, Jülich Campus, Ginsterweg 1, D-52428 Jülich, Germany 2 Research Centre Jülich, Institute of Thin Films and Interfaces (ISG1), D-52425 Jülich, Germany 3 National Institute of Materials Physics, Bucharest, Romania * Author to whom correspondence should be addressed. E-Mail: foerster@fh-aachen.de # Present address at Robert Bosch GmbH, Germany Received: 31 August 2006 / Accepted: 4 January 2006 / Published: 7 April 2006 Abstract: GaAs-based Gunn diodes with graded AlGaAs hot electron injector heterostructures have been developed under the special needs in automotive applications. The fabrication of the Gunn diode chips was based on total substrate removal and processing of integrated Au heat sinks. Especially, the thermal and RF behavior of the diodes have been analyzed by DC, impedance and S-parameter measurements. The electrical investigations have revealed the functionality of the hot electron injector. An optimized layer structure could fulfill the requirements in adaptive cruise control (ACC) systems at 77 GHz with typical output power between 50 and 90 mW.