photo-emf sensitivity of porous silicon thin layer–crystalline silicon heterojunction to ammonia adsorptionphoto-emf敏感性的多孔硅薄layer-crystalline硅异质结氨吸附.pdfVIP

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photo-emf sensitivity of porous silicon thin layer–crystalline silicon heterojunction to ammonia adsorptionphoto-emf敏感性的多孔硅薄layer-crystalline硅异质结氨吸附.pdf

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photo-emf sensitivity of porous silicon thin layer–crystalline silicon heterojunction to ammonia adsorptionphoto-emf敏感性的多孔硅薄layer-crystalline硅异质结氨吸附

Sensors 2011, 11, 1321-1327; doi:10.3390/s110201321 OPEN ACCESS sensors ISSN 1424-8220 /journal/sensors Article Photo-EMF Sensitivity of Porous Silicon Thin Layer–Crystalline Silicon Heterojunction to Ammonia Adsorption Yuriy Vashpanov *, Jae Il Jung and Kae Dal Kwack Electrical and Computer Engineering Division, Hanyang Institute of Technology, Hanyang University, 17 Haengdang-dong, Sung-dong-gu, 133-791 Seoul, Korea; E-Mail: jijung @hanyang.ac.kr (J.I.J.) * Author to whom correspondence should be addressed; E-Mail: vashpanov@hanyang.ac.kr; Tel.: +82-2-2294-0617; Fax: +82-2-2294-0619. Received: 20 December 2010; in revised form: 13 January 2011 / Accepted: 21 January 2011 / Published: 25 January 2011 Abstract : A new method of using photo-electromotive force in detecting gas and controlling sensitivity is proposed. Photo-electromotive force on the heterojunction between porous silicon thin layer and crystalline silicon wafer depends on the concentration of ammonia in the measurement chamber. A porous silicon thin layer was formed by electrochemical etching on p-type silicon wafer. A gas and light transparent electrical contact was manufactured to this porous layer. Photo-EMF sensitivity corresponding to ammonia concentration in the range from 10 ppm to 1,000 ppm can be maximized by controlling the intensity of illumination light. Keywords: gas sensors; porous silicon; heterojunction; photo-EMF 1. Introduction