precise temperature mapping of gan-based leds by quantitative infrared micro-thermography精确的温度定量红外micro-thermography gan-based led的映射.pdf

Sensors 2012, 12, 4648-4660; doi:10.3390/s120404648 OPEN ACCESS sensors ISSN 1424-8220 /journal/sensors Article Precise Temperature Mapping of GaN-Based LEDs by Quantitative Infrared Micro-Thermography 1 1 1 1 1 Ki Soo Chang , Sun Choel Yang , Jae-Young Kim , Myung Ho Kook , Seon Young Ryu , Hae Young Choi 2 and Geon Hee Kim 1,* 1 Division of Instrument Development, Korea Basic Science Institute, Daejeon 305-333, Korea; E-Mails: ksc@kbsi.re.kr (K.S.C.); md941057@kbsi.re.kr (S.C.Y.); jaykim@kbsi.re.kr (J.-Y.K.); kookmh@kbsi.re .kr (M.H.K.); syou95@kbsi.re.kr (S.Y.R.) 2 Medical Device Development, Osong Medical Innovation Foundation, Chungbuk 363-951, Korea; E-Mail: chy4745@ * Author to whom correspondence should be addressed; E-Mail: kgh@kbsi.re.kr; Tel.: +82-42-865-3460; Fax: +82-42-865-3469. Received: 20 February 2012; in revised form: 26 March 2012 / Accepted: 27 March 2012 / Published: 10 April 2012 Abstract: A method of measuring the precise temperature distribution of GaN-based light-emitting diodes (LEDs) by quantitative infrared micro-thermography is reported. To reduce the calibration error, the same measuring conditions were used for both calibration and thermal imaging; calibration was conducted on a highly emissive black-painted area on a dummy sapphire wafer loaded near the LED wafer