1. 您所在位置：
  2. 网站首页
  3. 文档分类
  4. 外语学习
  5. 英语阅读

design of higher-k and more stable rare earth oxides as gate dielectrics for advanced cmos deviceshigher-k设计和更稳定的稀土氧化物作为先进cmos器件的栅极电介质.pdfVIP

  • 2
  • 0
  • 约 26页
  • 2017-09-12 发布于上海
  • 举报

design of higher-k and more stable rare earth oxides as gate dielectrics for advanced cmos deviceshigher-k设计和更稳定的稀土氧化物作为先进cmos器件的栅极电介质.pdf

    design of higher-k and more stable rare earth oxides as gate dielectrics for advanced cmos deviceshigher-k设计和更稳定的稀土氧化物作为先进cmos器件的栅极电介质

    Materials 2012, 5, 1413-1438; doi:10.3390/ma5081413 OPEN ACCESS materials ISSN 1996-1944 /journal/materials Review Design of Higher-k and More Stable Rare Earth Oxides as Gate Dielectrics for Advanced CMOS Devices Yi Zhao Sc

    您可能关注的文档

    最近下载

    文档评论（0）

    1亿VIP精品文档

    更多 >

    相关文档

    更多 >