BUZ111S资料(英文).pdfVIP

BUZ 111S SIPMOS Power Transistor Features Product Summary • N channel Drain source voltage VDS 55 V • Enhancement mode Drain-Source on-state resistance RDS(on) 0.008 Ω • Avalanche rated Continuous drain current ID 80 A • dv/dt rated • 175˚C operating temperature Type Package Ordering Code Packaging Pin 1 Pin 2 Pin 3 BUZ111S P-TO220-3-1 Q67040-S4003-A2 Tube G D S BUZ111S E3045A P-TO263-3-2 Q67040-S4003-A6 Tape and Reel BUZ111S E3045 P-TO263-3-2 Q67040-S4003-A5 Tube Maximum Ratings, at T = 25 ˚C, unless otherwise specified j Parameter Symbol Value Unit Continuous drain current ID A TC = 25 ˚C, 1) 80 TC = 100 ˚C 80 Pulsed drain current IDpulse 320 TC = 25 ˚C Avalanche energy, single pulse EAS 700 mJ I = 80 A, V = 25 V, R = 25 Ω D DD GS Avalanche energy, periodic limited by Tj max EAR 30 Reverse diode dv/dt dv/dt 6 kV/µs I = 80 A, V = 40 V, di/dt = 200 A/µs, S DS T = 175 ˚C jmax Gate source voltage VGS ±20 V Power dissipati