宽带单片低噪声放大器的增益温度补偿.pdf

5 Vol. 34 No. 5 2006 5 ACTA ELECTRONICA SIN ICA M ay 2006 彭龙新, 杨乃彬, 林金庭 (, 210016) : PHEMT , PHEMT , PHEMT , . ,. PHEMT ,. , , , PHEMT ,, . , . , 55 ~ 85 55 ~ 125 , 6GH z 60% 51%, . : ; ; ; ; : TN7223 : A : ( 2006) TheTemperatureCompensation forMM IC BroadbandAmplifierGain PENG Longxin, YANG N aibin, LIN Jinting (N anj ing E lectron icsD evices In sti tu te, N anj ing, J iangsu 210016, Ch ina ) Abstract: The dependence of PHEMT s drain current and gain on temperaturewere analyzed. Itwas found that the current and gain decreased w ith temperature increase. Two m ethods w ere presented for automatically compensating the temperature dependence and their principalswere analyzed. A series source resistor could keep thePHEMT s drain nearly unchangeable and decrease the temperature effect on the amplifier gain to some content. H owever, the autom atic gatevolt age temperature compensationw as a strong compensation. It increased the gate voltages and PHEMT s transconductance w ith the temperature increase, thus greatly decreased the temperature effect on the gain. The twom ethodswere then com bined and applied to a broadband low noise amplifier. Good expermi ental resultswere obtained.W hen the temperature in creased from 55 to 85 and from 55 to 125 , the amplifier gain drop decreased by 60% and 51% at 6GH z, respectively, which greatly mi proved the gaintemperature feature of the amplifier. Keywords: pseudomophic high electron mobility transistor ( PHEMT ); broadband monolithic amplifier; tempera ture dependence of dra