莆田现代名人总汇(Putian modern celebrity collection).docVIP

莆田现代名人总汇(Putian modern celebrity collection).doc

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莆田现代名人总汇(Putian modern celebrity collection)

莆田现代名人总汇(Putian modern celebrity collection) Putian modern celebrity collection According to statistics, Putian has 14 academicians (2 deceased), only in Fujian and the provincial capital of Fuzhou, according to the existing population of Putian to calculate 3 million people, 230 thousand out of a academicians. Lin Lanying, a semiconductor material scientist. Born in 1918, Fujian County, Putian. He graduated from Concordia University in 1940 and received a Ph. D. in solid state physics from University of Pennsylvania in 1955. After returning to China in 1957, he served as a researcher and deputy director of the Institute of semiconductors of the Chinese Academy of Sciences, vice chairman of the China Association for science and technology, NPC deputies and standing committee members, and was elected academician of the Chinese Academy of Sciences in 1980. Lin Lanying has been engaged in semiconductor material science for more than 40 years and is the founder and pioneer of Chinas semiconductor material science. She took the lead in research organization and leadership of Chinas growth of single crystal silicon, gallium arsenide and gallium phosphide, indium antimonide single crystal, and obtained the first single crystal semiconductor. Provide a variety of single crystal semiconductor materials in our country in the research of semiconductor integrated circuit and optoelectronic devices, and the growth of technology and the corresponding material testing technology to the national promotion of the single crystal, laid the foundation for creating Chinas microelectronics and optoelectronics. Participate in the organization and leadership of 4 thousand large scale integrated circuit -MOS random access memory development, 1980 and 1982 two won the first prize of scientific and technological progress of the Chinese Academy of Sciences (16 thousand). Her research on high purity gallium arsenide, liquid phase epitaxy and gas phase epitaxy has reached the international advan

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