ch6 微波振荡源.pdf

Chapter 4 Microwave Oscillator 第四章 微波振荡源 Shao Qunfeng, PhD Email shaoqf@lzu.edu.cn  Microwave semiconductor device • Diode • Transistor  Microwave vacuum electronic device —— Microwave Tubes • Static control tubes • Dynamic control tubes  Klystron ——Velocity Modulation tubes  Travelling Wave Tubes Microwave Microwave Tubes Semiconductor device Frequency ~10GHz-~100GHz 20GHz Output Power ~100mW mW Production Complex Simple Technics Production High Low Cost Volume Large Chip Lifetime Short Long I. Klystron (微波速调管) Physical Basis —— Energy Transformation Energy supplier DC Source Energy of static electric Field Electrons source cathode-ray tube (CRT) Acceleration Device • Electron Accelerated Kinetic energy of electrons Electrons Movement control Device Energy of high- •Amplification Oscillation Control High Frequency Energy frequency Field Reservation device  The Energy exchange between electrons and electric field 1 2 1 2 m  m e(V V ) B A B A