ZnS薄膜的制备.ppt

Reporter:Li Jianmin Yan Zhiping, Liu Jiwan, Hui Liwei, Xie Yuntao,Wang Mengjiao, Li Jianmin, Bao Shouxin, Shi Xiaohui, Huang Yimin, Chen Jian,Wang Bei, Yao Dongbao Preparation of ZnS thin films 材料合成化学-12组 Outline Introduction of ZnS thin films in solar cells Methods for preparation of ZnS TFS Conlusions Wishes ① ② ③ 材料合成化学-12组 Introduction-1 --Nakada et al. IEEE transactions on electron devices,VOL.46, NO.10,1999:2093-2097 Typical structure of CIGS solar cell 材料合成化学-12组 Introduction-2 wide band gap (3.65 ev) high refractive index(2.35) high dielectric constant ...... CVD SOL-GEL RF-sputtering CBD ...... ZnS thin films 材料合成化学-12组 Methods--RF sputtering ---Hwang et al. Nanoscale Research Letters,2012. 7.26 Parameter Condition Target ZnS (99.99% pure) Substrate Corning E2000 glass RF power 120 W Sputtering gas Pure argon (55 sccm) TDeposition 20 min PSputtering 3 × 10-2 Torr TSubstrate 100°C, 200°C, 250°C, 300°C, 350°C, 400°C Distance 50 mm Sketch of RF sputtering chamber and principle 材料合成化学-12组 Results-RF Sputtering 材料合成化学-12组 Methods--CVD ---FU Ligang,et.al, Rare Metals,Vol. 30, No. 4, 2011:387. Sketch of CVD chamber and principle 1) Raw material: high-purity zinc(99.999%) high-purityH2S(99.99%) 2) Chemical formulation: H2S(g) +Zn(g) = ZnS(s) + H2(g) ΔG=82.1T - 5.9TlnT - 0.62 × 10-3T2 - 319799 J/mol 3) Other conditions: T—reaction temperature(873-1003K) reaction pressure—5-10MPa mole ratio of Zn(g)/H2S(g)—0.8-1.4 deposition rate — 30-120μm/h 材料合成化学-12组 Results-CVD 材料合成化学-12组 Methods--Sol-Gel ---Abdullah Goktas et.al,J Mater Sci: Mater Electron (2012) 23:1361–1366 Dip- coating Dry Annealing thin films 0.01 mol Zn(OOCCH3)2 0.03 mol methanol 0.03 mol CH4N2S 0.09 mol methanol ＋ repeat 材料合成化学-12组 Results-Sol-Gel 材料合成化学-12组 Methods--CBD ---Seung Wook Shin et.al,Solar Energy , (2011)85 :2903–2911 Experimental parameter Vtotal=200ml; 40 ml of 0.2 M Zn(CH3COO)2·2H2O; 40 ml of