单轴应变对石墨烯掺杂硼氮铝硅磷的影响与调控.PDFVIP

单轴应变对石墨烯掺杂硼、氮、铝、硅、磷的影响与调控 吴其胜，王子路，王金兰* （东南大学物理系 南京 211189 ） Supporting information Figure S1 应变分别为-6%、-3%、0%、3%和6%时硼掺杂石墨烯的电子态密度图。total 表示总态密度， C-p 表示碳原子的2p 轨道分波态密度，B-p 表示硼原子的2p 轨道分波态密度。虚线表示费 米能级。 Density of states of boron-doped graphene for different strains (-6%, -3%, 0%, 3% and 6%). “total” represents total density of states. C-p represents dos projected on 2p orbital of carbon atoms. B-p represents dos projected on 2p orbital of boron atom. The dashed line represents the Fermi level. Figure S2 应变分别为-6%、-3%、0%、3%和6%时氮掺杂石墨烯的电子态密度图。total 表示总态密度， C-p 表示碳原子的2p 轨道分波态密度，N-p 表示氮原子的2p 轨道分波态密度。虚线表示费 米能级。 Density of states of nitrogen-doped graphene for different strains (-6%, -3%, 0%, 3% and 6%). “total” represents total density of states. C-p represents dos projected on 2p orbital of carbon atoms. N-p represents dos projected on 2p orbital of nitrogen atom. The dashed line represents the Fermi level. Figure S3 应变分别为-6%、-3%、0%、3%和6%时铝掺杂石墨烯的电子态密度图。total 表示总态密度， C-p 表示碳原子的2p 轨道分波态密度，Al-p 表示铝原子的3p 轨道分波态密度。虚线表示费 米能级。 Density of states of aluminum-doped graphene for different strains (-6%, -3%, 0%, 3% and 6%). “total” represents total density of states. C-p represents dos projected on 2p orbital of carbon atoms. Al-p represents dos projected on 3p orbital of aluminum atom. The dashed line represents the Fermi level. Figure S4 应变分别为-6%、-3%、0%、3%和6%时硅掺杂石墨烯的电子态密度图。total 表示总态密度， C-p 表示碳原子的2p 轨道分波态密度，Si-p 表示硅原子的3p 轨道分波态密度。虚线表示费 米能级。 Density of states of silicon-doped graphene for different strains (-6%, -3%, 0%, 3% and 6%). “total” represents total density of states. C-p represents dos projected on 2p orbital of carbon atoms. Si-p represents dos projected on 3p orbital of silicon atom. The dashed line represents the Fermi level. Fig